NSN Information for Part Number D2716 with NSN 5962-01-118-8116, 5962011188116
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-118-8116 Item Description: MICROCIRCUIT,MEMORY | 5962 | 011188116 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| D2716 | 3 | 1 | 5 |
Characteristics Data of NSN 5962-01-118-8116, 5962011188116
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.250 INCHES UM" |
| ADAT | BODY WIDTH | 0.490 INCHES MINIMUM AND 0.510 INCHES UM" |
| ADAU | BODY HEIGHT | 0.180 INCHES UM" |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | MSG GEN/RECDR 11530" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS UM POWER SOURCE" |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS UM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS UM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
| CZER | MEMORY DEVICE TYPE | ROM" |
| CZZZ | MEMORY CAPACITY | UNKNOWN" |
| TEST | TEST DATA DOCUMENT | 11530-312851 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI" |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |
| ADAQ | BODY LENGTH | 1.250 INCHES UM" |
| ADAT | BODY WIDTH | 0.490 INCHES MINIMUM AND 0.510 INCHES UM" |
| ADAU | BODY HEIGHT | 0.180 INCHES UM" |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | MSG GEN/RECDR 11530" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS UM POWER SOURCE" |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS UM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS UM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
| CZER | MEMORY DEVICE TYPE | ROM" |
| CZZZ | MEMORY CAPACITY | UNKNOWN" |
| TEST | TEST DATA DOCUMENT | 11530-312851 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI" |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |
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