NSN Information for Part Number L7C109MMB20 with NSN 5962-01-460-9466, 5962014609466
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-460-9466 Item Description: Microcircuit Memory | 5962 | 014609466 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| L7c109mmb20 | 5 | 1 | 5 |
Characteristics Data of NSN 5962-01-460-9466, 5962014609466
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | 1055-01-251-9756 E/I FSCM 67268 |
| CBBL | FEATURES PROVIDED | LOW POWER AND MONOLITHIC |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X8 STACTIC RANDOM ACCESS MEMORY (SRAM) LOW POWER, MONOLITHIC SILICON |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | CIRCUIT FUNCTION 128K X 8 STANDARD POWER CMOS SRAM DUAL CE / ACCESS TIME 20 NS |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-833 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
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