NSN Information for Part Number 445 4 01463 000 with NSN 5962-01-106-4664, 5962011064664
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-106-4664 Item Description: Microcircuit Memory | 5962 | 011064664 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 445 4 01463 000 | 2 | 9 | 5 |
Characteristics Data of NSN 5962-01-106-4664, 5962011064664
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.810 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.298 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.165 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -55.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND EDGE TRIGGERED AND W/ENABLE AND W/STORAGE AND W/STROBE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 11 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 20.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 05869-725000-959 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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